کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
730012 | 892942 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and electrical properties of Al/aniline green/n-Si/AuSb structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication and electrical properties of Al/aniline green/n-Si/AuSb structure Fabrication and electrical properties of Al/aniline green/n-Si/AuSb structure](/preview/png/730012.png)
چکیده انگلیسی
The current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of Al/aniline green(AG)/n-Si/AuSb structure were investigated at room temperature. A modified Norde's function combined with conventional forward I–V method was used to extract the parameters including barrier height (BH) and the series resistance. The barrier height and series resistance obtained from Norde's function was compared with those from Cheung functions, and it was seen that there was a good agreement between the BH values and series resistances from both methods. The C–V characteristics were performed at 10 and 500 kHz frequencies, and C–f characteristics were performed 0.0, +0.4 and −0.4 V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 11, Issue 2, April 2008, Pages 53–58
Journal: Materials Science in Semiconductor Processing - Volume 11, Issue 2, April 2008, Pages 53–58
نویسندگان
Ş. Aydoğan, Ö. Güllü, A. Türüt,