Current-voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

► I-V characteristics of the AlCdO/unpolished (polished) p-type Si diodes were examined. ► The higher barrier height of the AlCdO/p-type Si diode was found. ► The lower series resistance of the AlCdO/p-type Si diode was found. ► The surface roughness plays an essential role in improving the device performance.