A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0 V power supply operation in Ferroelectric (Fe-) NAND flash memories. The proposed SCSB scheme only self-boosts the channel voltage of the cell to which the program voltage VPGM is applied in the program-inhibit NAND string. The program disturb is well suppressed at the 1.0 V power supply voltage in the proposed program scheme. The power consumption of the Fe-NAND at VCC = 1.0 V decreases by 86% compared with the conventional floating gate (FG-) NAND at VCC = 1.8 V without the degradation of the write speed. The number of NAND chips written simultaneously in Solid-State Drives (SSD) increases by 6.7 times and the 9.3 GB/s write throughput of the Fe-NAND SSD is achieved for an enterprise application.

Research highlights
► A Single-Cell Self-Boost program scheme for 1.0 V power supply Ferroelectric (Fe-) NAND flash memories.
► Well suppressed program disturb below 1.0 V power supply.
► 86% power reduction from the conventional floating gate NAND.
► 9.3 GB/s Fe-NAND solid-state drive write throughput.