کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747177 894505 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modelling and optimization of III/V transistors with matrices of nanowires
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Modelling and optimization of III/V transistors with matrices of nanowires
چکیده انگلیسی

The magnitude and impact of the parasitic capacitances in a vertical InAs nanowire transistor consisting of a matrix of nanowires is evaluated. A simple transistor model is fitted to experimental I–V characteristics and the influence of the parasitic components on the transistor performance for different structures is investigated. Simulations of the S-parameters indicate an intrinsic fT of about 690 GHz for 50 nm LG. We show that fT reaches 56% of the intrinsic value in an optimized transistor structure with closely spaced nanowires and that a high wire density is more efficient to reduce the parasitics than to pattern the electrodes. Finally, the analytical model is used to demonstrate the operation and to simulate the performance of ring-oscillators.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 12, December 2010, Pages 1505–1510
نویسندگان
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