کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747341 894516 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories
چکیده انگلیسی

A sub-bandgap optical subthreshold current spectroscopy (OSCS) is proposed for extracting the energy distribution of interface trap density (Dit) in nitride-based charge trap flash (CTF) memory devices. It is based on the optical response of the subthreshold slope under sub-bandgap photonic excitation. By using the OSCS technique, we comparatively investigated the dominant energy range of the program/erase (P/E) cycling-induced Dit and observed that it is shallow in NROM-type operation and deep in NAND-type operation. Because no electrical pulse is required during extraction and the current is measured not from the substrate contact but from the drain contact, the OSCS technique is expected to be more useful for emerging nano-scale devices in comparison with the conventional charge pumping technique.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 5, May 2010, Pages 557–563
نویسندگان
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