کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747436 | 894522 | 2009 | 11 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)](/preview/png/747436.png)
In the paper proposed here, we are studying the dynamic avalanche from experimental results first, dynamic avalanche is identified on a punch through insulated gate bipolar transistor (PT-IGBT) module 1200 V–300 A from Mitsubishi. Secondly, the phenomenon is analysed thanks to simple solid state devices equations. Numerical simulations are used to confirm experimental results. Simulation results allows us locating the active area of the dynamic avalanche during turn-off under over-current conditions. A PT-IGBT cell is described with MEDICI™, a finite element simulator. A mixed-mode simulation is performed thanks to MEDICI™ and SPICE™. The circuit simulated here is a buck topology with an inductive load. Finally, a thermal analysis is performed to estimate temperature increase due to dynamic avalanche.
Journal: Solid-State Electronics - Volume 53, Issue 9, September 2009, Pages 944–954