کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747492 894529 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
All injection level power PiN diode model including temperature dependence
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
All injection level power PiN diode model including temperature dependence
چکیده انگلیسی

A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift–diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 719–725
نویسندگان
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