کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747503 | 894529 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching](/preview/png/747503.png)
چکیده انگلیسی
Wet-etching-induced surface patterning of p-type indium tin oxide (ITO) electrodes has been investigated to improve the light output of GaN-based light-emitting diodes (LEDs). Etching of as-deposited ITO layers in a buffered-oxide-etch solution results in the formation of a high density of randomly distributed sphere-shaped protrusions (250–1100 nm in size). LEDs fabricated with the 7 s-etched ITO electrodes yield higher light output (by 31.7% at 20 mA) compared with LEDs made with unpatterned ITO electrodes. The improvement is attributed to the increased light escape probability via the randomly distributed sphere-shaped protrusions formed on the electrode surfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 793–796
Journal: Solid-State Electronics - Volume 51, Issue 5, May 2007, Pages 793–796
نویسندگان
Dong-Seok Leem, Takhee Lee, Tae-Yeon Seong,