کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747511 | 1462269 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Scanning capacitance microscopy (SCM) measurements have been performed on highly doped Si monolayers both in constant-dV and constant-dC modes. The performances of these operating modes have been compared in terms of both signal sensitivity to high doping levels and spatial resolution. A higher sensitivity to boron-doped Si monolayers separated by 30 nm in constant-dC mode is observed. This result is attributed to a higher intrinsic spatial resolution for this latter mode and suggests the further ability of the constant-dC mode to deconvolute the SCM signal to carrier distribution near highly doped layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issues 9–10, September–October 2006, Pages 1479–1482
Journal: Solid-State Electronics - Volume 50, Issues 9–10, September–October 2006, Pages 1479–1482
نویسندگان
D. Goghero, B. Gautier, A. Descamps, G. Bremond, M. Faucher, D. Mariolle, F. Bertin,