کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
747523 | 1462269 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes](/preview/png/747523.png)
چکیده انگلیسی
The post-annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for 40-Gbps optical receiver applications, is experimentally investigated. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at 250 and 300 °C whereas the dark current and the breakdown voltage are almost constant after annealing at 200 °C. Based on the experimental results, the post-annealing is more effective for the dark current improvement than the conventional curing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issues 9–10, September–October 2006, Pages 1546–1550
Journal: Solid-State Electronics - Volume 50, Issues 9–10, September–October 2006, Pages 1546–1550
نویسندگان
Hansung Joo, Su Chang Jeon, Yong Hwan Kwon, Joong-Seon Choe, Ilgu Yun,