Correlated noise in bipolar transistors: Model implementation issues

• A new extended orthogonalization scheme is proposed to model correlated noise in SPICE.
• Derived single node noise model including BC-SCR delay along with the NQS noise is first of its kind.
• A gm-factor is introduced in correlated BJT noise modeling.
• Circuit realization constraints for noise modeling are formulated.

A new orthogonalization scheme is suggested for implementing correlated noise of bipolar transistors. The scheme provides a necessary condition on the non-quasi-static (NQS) models that can be used to obtain an implementation-suitable correlated noise model. One of the solutions presented here corresponds to a single node realization not reported so far. The gmgm-factor is introduced in the noise analysis explaining the deviations of a former noise model from device simulations. The model is extended to include the collector space-charge-region induced noise by retaining the simplicity of the realization and preserving the model parameter count.