Low-frequency noise and effective trap density of short channel p- and n-types junctionless nanowire transistors

• Study of the low-frequency noise of p- and n-types short-channel junctionless transistors is performed.
• The low-frequency noise is evaluated in terms of channel length and doping concentration.
• Carrier number fluctuations dominate the noise in n-type devices while mobility fluctuations are important in p-type ones.
• The effective trap density presents its maximum around 1.4 nm away from the silicon/gate dielectric interface.
• Correlated mobility fluctuations in the number of carriers are more pronounced in p-type devices.

This work presents an evaluation of the Low-Frequency Noise (LFN) exhibited by short-channel Junctionless Nanowire Transistors (JNTs). Unlike in previous works in which only the noise of n-type transistors was evaluated, this paper exhibits an analysis of both the LFN and the effective trap density of n- and p-type JNTs. The low-frequency noise is analyzed in terms of the channel length as well as doping concentration and has shown to be nearly independent on the former parameter when the device is biased above threshold and to decrease with the raise of the latter. Also, carrier number fluctuations dominate the LFN in nMOS JNTs whereas an important mobility fluctuation component is present in the pMOS ones. The effective trap density of JNTs has shown to be in the order of 1019 cm−3 eV−1, presenting its maximum around 1.4 nm away from the silicon/gate dielectric interface independently on the device type or doping concentration.