کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747717 1462238 2014 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Compact core model for Symmetric Double-Gate Junctionless Transistors
ترجمه فارسی عنوان
مدل هسته کامپکت برای ترانزیستورهای متقارن دوقطبی متقارن
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی


• Physically-based compact model for Symmetric Double-Gate Junctionless Transistors.
• The model considers both depletion and accumulation operating conditions.
• Analytical expressions are derived to calculate charges and currents.
• Derivative of currents are continuous and symmetrical with respect to Vd = 0 V.
• Validated for 5 × 1018 and 1 × 1019 cm−3 and layer thickness of 10, 15 and 20 nm.

A new charge-based compact analytical model for Symmetric Double-Gate Junctionless Transistors is presented. The model is physically-based and considers both the depletion and accumulation operating conditions including the series resistance effects. Most model parameters are related to physical magnitudes and the extraction procedure for each of them is well established. The model provides an accurate continuous description of the transistor behavior in all operating conditions. Among important advantages with respect to previous models are the inclusion of the effect of the series resistance and the fulfilment of being symmetrical with respect to drain voltage equal to zero. It is validated with simulations for doping concentrations of 5 × 1018 and 1 × 1019 cm−3, as well as for layer thickness of 10 and 15 nm, allowing normally-off operation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 94, April 2014, Pages 91–97
نویسندگان
, , , , , ,