80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices

This paper presents a combined pulsed I(V)–pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the safe operating area (SOA) of advanced SiGe:C HBTs. System behavior is explained in detail and reproduced by simulation taking into account the influence of all parasitic components. Optimization steps, system verification, measurement results and accuracy issues are presented.

► Advanced pulsed I(V) and pulsed RF measurement system is proposed.
► Advanced SiGe:C HBT technology is characterized.
► Self-heating inside the device has been significantly decreased.
► Pulse simulations using a distributed thermal network are carried out.