کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748014 | 894726 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The physics-based IGBT sub-circuit compact model which can successfully include the effects of the localized lifetime control (LLC) on device electrical performance has been described in this paper. The model of non-punch trough IGBTs with different locations of LLC region is developed and its accuracy is verified based on the agreement with the results of two-dimensional numerical simulations of LLC effects in IGBTs. The models have been implemented in SPICE for investigation of the total power losses in the single phase Pulse Width Modulated (PWM) inverters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 3, March 2010, Pages 268–274
Journal: Solid-State Electronics - Volume 54, Issue 3, March 2010, Pages 268–274
نویسندگان
Nebojsa Jankovic, Petar Igic, Naoki Sakurai,