کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748024 | 894726 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment](/preview/png/748024.png)
چکیده انگلیسی
A stable aluminum oxide (Al2O3) film was obtained on a plastic substrate for use as low-temperature polycrystalline silicon (LTPS) thin film transistors (TFT) in a flexible display by in situ plasma oxidation prior to the deposition of gate dielectric grown by plasma enhanced atomic layer deposition (PEALD). The hysteresis value was minimized to about 2 V when more than 100 W of plasma power was applied during oxidation, which provides a formation of a high quality interfacial oxide layer. Moreover, by post-annealing at 200 °C without a plasma application, flat band voltage was shifted to near 1.2 V, which may be attributed to defect passivation by H diffusing out from SiNx:H.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 3, March 2010, Pages 323–326
Journal: Solid-State Electronics - Volume 54, Issue 3, March 2010, Pages 323–326
نویسندگان
Dong Jin Park, Jung Wook Lim, Byung Ok Park,