Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials

• Presentation of a semiclassical multi-subband Monte Carlo model for tunnel-FETs.
• Including impact of carrier confinement on band-to-band-tunneling rate.
• Comparison with simulations and experiments for Si & III–V tunnel-FETs.

We present a semiclassical model for Tunnel-FET (TFET) devices capable to describe band-to-band tunneling (BtBT) as well as far from equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing multi-subband Monte Carlo (MSMC) transport simulator that accounts as well for the effects typical to alternative channel materials and high-κ dielectrics. A simple but accurate correction for the calculation of the BtBT generation rate to account for carrier confinement in the subbands is proposed and verified by comparison with full 2D quantum calculation.