Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances

• Impact of Ge content on Vt, β, and Id mismatches in advanced PMOSFETs.
• Global improvement of electrical parameters mismatch observed in PMOSETs with SiGe channel.
• The reduction of Coulomb scattering with the introduction of Ge improves β mismatch.

In this work, P-MOS transistors of advanced bulk technology integrating high K/metal gate and SiGe channel are considered. An exhaustive study of threshold voltage (Vt), current gain factor (β), and drain-current (Id) mismatches with different Ge proportions in the channel is performed, in linear regime, for transistors with and without pocket implants. A comparison between channels with and without Germanium and with different proportions of Germanium is considered. A global improvement of P-MOS transistors electrical parameters mismatch is observed with the introduction of Ge in the channel. Some explanations for this improvement with the introduction of Ge are proposed.