Reliability concern and design for the lateral insulator gate bipolar transistor based on SOI substrate

► A novel SOI-LIGBT device with high reliability is discussed and developed. ► The improved layout is selected to avoid the anode punch-through. ► The stretched terminal is adopted to increase the off-state breakdown voltage. ► The LV-pwell attaching the P-body is added to reduce the hot-carrier degradation. ► The deep p-type layer is implanted to improve the anti-latch-up capability.