کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748181 1462247 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A pragmatic design methodology using proper isolation and doping for bulk FinFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A pragmatic design methodology using proper isolation and doping for bulk FinFETs
چکیده انگلیسی


• This paper presents a pragmatic device design methodology for bulk FinFET.
• The pragmatic design could be controlled by isolation oxide and substrate doping levels.
• The design methodology can be applied to low power and high speed applications within a design window.

A feasible device design methodology for bulk FinFETs is proposed. An optimal yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin gate-to-substrate isolation oxide and moderately doped substrate. In contrast, high substrate doping underneath the fin and thick isolation oxide are usually needed to prevent substrate leakage in conventional bulk FinFETs. A design window accounting for isolation oxide thickness and substrate doping level is proposed for low power and high performance application. Sufficient substrate doping (in the mid-1018 cm−3 range) and proper isolation oxide of 10s nm are suggested based on our performance projection.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 85, July 2013, Pages 48–53
نویسندگان
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