کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748223 | 894748 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microwave performance of field-plate 0.13-μm MOS transistors with varying field-plate extension
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Si-based field-plate 0.13 μm gate length metal-oxide-semiconductor field effect transistor (Si MOSFET) with field-plate (FP) lengths of 0.1 μm, 0.2 μm, and 0.3 μm have been fabricated and investigated. The field-plate metals were connected to gate electrode in this study to improve device gate resistance (Rg) resulting in the better microwave performance. By increasing the length of field-plate metal extension (LFPE), the off-state drain-to-source surface leakage current can be suppressed. Besides, low surface traps in FP NMOS also leads to a higher drain-to-source current (Ids) especially at high current regime compared to standard device. The power added efficiency (PAE) was 56.3% for LFPE of 0.3 μm device, and these values where 54.7% and 53.8% for LFPE of 0.2 μm and 0.1 μm devices, respectively. Wider field-plate metal extension exhibits highly potential for low noise amplifier and high efficiency power amplifier applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 5, May 2008, Pages 725-729
Journal: Solid-State Electronics - Volume 52, Issue 5, May 2008, Pages 725-729
نویسندگان
Hsien-Chin Chiu, Shao-Wei Lin, Chia-Shih Cheng, Chien-Cheng Wei,