کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748350 1462266 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
چکیده انگلیسی

Ultra thin Si cap growth by Reduced Pressure Chemical Vapor Deposition on relaxed Ge substrates is detailed in this paper for Ge pMOSFET (Metal Oxide Semiconductor Field Effect Transistors) passivation purposes. A cross calibration of different measurement techniques is first proposed to perfectly monitor Si monolayers thickness deposited on Ge substrates. Different characteristics, impacting Ge pMOSFETs device performances, are next detailed for various Si cap growth processes using different Si precursors: DiChloroSilane (DCS), silane and trisilane. The critical Si thickness of plastic relaxation has been determined at 12 monolayers. Presence of point defects has been identified for very low growth temperature as 350 °C. Ge–Si intermixing, caused by a Ge segregation mechanism, is strongly reduced by the use of trisilane as Si precursor at low temperatures.

Research highlights
► Impact of Si cap Ge passivation pn Ge pMOSFETs performances.
► Impact of RPCVD Si growth process conditions on Si crystallinity and Ge segregation.
► Offers the best route for Ge passivation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 60, Issue 1, June 2011, Pages 116–121
نویسندگان
, , , , , , , , , , , , , , , , , ,