HfO2 nanocrystal memory on SiGe channel

This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance.

► This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel.
► Program/erase speed were improved by epi-SiGe (Ge: 15%) channel.
► The characteristics of different oxynitride tunnel oxide thicknesses were been compared.
► Superior memory characteristics can be achieved for this memory structure.