Field effect transistor as ultrafast detector of modulated terahertz radiation

Theoretical analysis of the detection of modulated sub-terahertz and terahertz radiation by a short channel field effect transistor (FET) predicts a very high upper limit for modulation frequency, Ωmax, up to 100 GHz or even higher. Even the minimal value of Ωmax, which is reached deep below the threshold, lies in the gigahertz range, thus promising for usage of FET-based structures for ultrafast detection of modulated terahertz radiation