کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748401 | 894758 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An explicit surface-potential-based model for undoped double-gate MOSFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An explicit surface-potential-based model for undoped double-gate MOSFETs An explicit surface-potential-based model for undoped double-gate MOSFETs](/preview/png/748401.png)
چکیده انگلیسی
This paper presents an explicit surface-potential-based analytic model for the undoped long-channel symmetric double-gate MOSFET. The analytic model is derived from the rigorous solution of Poisson's equation. Unlike the exiting analytic models using the numerical iterative method, this analytic model is based on an explicit analytic approximation. The accuracy of the proposed analytic model is justified by extensive comparisons with the numerical calculations. The relative error in nV range has been achieved. The resulting current-voltage and the derivative curves are in complete agreement with the numerical iterative results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 2, February 2008, Pages 282-288
Journal: Solid-State Electronics - Volume 52, Issue 2, February 2008, Pages 282-288
نویسندگان
Jing-Feng Gong, Philip C.H. Chan, Mansun Chan,