کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748466 1462253 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack
چکیده انگلیسی

Poly-Si MOSFETs using a gate stack composed of ultra-thin HfSiOx and TiN are shown, and they are compatible with a monolithic three-dimensional integrated circuit (3D-ICs) process with the highest thermal budget of 700 °C. The poly-Si MOSFETs were studied for fabrication process temperatures with parasitic resistance, effective gate length, and grain boundary trap density. The short-channel effect with VT (threshold voltage), subthreshold swing (SS), and drain-induced barrier lowering (DIBL) was also compared at 650 °C and 700 °C. For stress reliability of both hot carrier and PBTI, the short-channel devices showed more stability in VT than the long-channel devices due to less grain boundary scattering. This study promotes the ultra-thin high-K/metal gate poly-Si MOSFET as a candidate for future monolithic 3D-ICs and silicon-on-glass (SOG) applications.


► The poly-Si MOSFETs using an ultra-thin HfSiOx has a subthreshold swing of 193 mV/dec.
► It is compatible with monolithic 3D-ICs, SOG, and AMOLED due to thermal budget of 700 °C.
► The fabrication process temperatures and stress reliability were studied.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 79, January 2013, Pages 244–247
نویسندگان
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