Resistive switching in zinc–tin-oxide

Bipolar resistive switching is demonstrated in the amorphous oxide semiconductor zinc–tin-oxide (ZTO). A gradual forming process produces improved switching uniformity. Al/ZTO/Pt crossbar devices show switching ratios greater than 103, long retention times, and good endurance. The resistive switching in these devices is consistent with a combined filamentary/interfacial mechanism. Overall, ZTO shows great potential as a low cost material for embedding memristive memory with thin film transistor logic for large area electronics.

► We present the first report of resistive switching in zinc–tin-oxide (ZTO).
► ZTO is the leading alternative material to IGZO for TFTs for LCDs.
► ZTO has an advantage over IGZO of lower cost due to the absence of In and Ga.
► Al/ZTO/Pt crossbar RRAM devices show switching ratios greater than 103.
► ZTO shows promise for embedding RRAM with TFT logic for large area electronics.