|کد مقاله||کد نشریه||سال انتشار||مقاله انگلیسی||ترجمه فارسی||نسخه تمام متن|
|748523||894767||2006||8 صفحه PDF||سفارش دهید||دانلود رایگان|
Schottky diode microwave pulse power detectors were fabricated by both a CMOS process and a post-CMOS process. Focused ion beam (FIB) milling and ion-induced deposition were used for the post-CMOS fabrication. Fabricated detectors were tested under RF direct injection and RF radiation. CMOS fabricated Schotty diode power detectors had 820 ns pulse response time, 36 dBm dynamic range, and began to detect −21 dBm injected input power level. FIB fabricated Schottky diode power detectors with large contact area had 6 μs pulse response time, 25 dBm dynamic range, and began to detect −15 dBm injected input power level, and Schottky diode with small contact area had 100 ns pulse response time, 16 dBm dynamic range, and began to detect −1 dBm injected input power level. The main factor determining pulse response time and dynamic range was the area of the Schottky contact of diodes.
Journal: Solid-State Electronics - Volume 50, Issue 6, June 2006, Pages 951–958