Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors

The frequency response of all oxide field-effect transistors with amorphous LaAlO3 on a crystalline SrTiO3 substrate is reported. The intrinsic cut-off frequencies of 4 μm gate-length devices are found to be approximately 17 MHz indicating that with gate length scaling gigahertz cut-off frequency is possible. The low cut-off frequency is primarily limited by the low effective mobility. The estimated effective mobility value determined from the S-parameter measurement is 3.8 cm2/Vs, which is consistent with previous reports. Small-signal equivalent circuit model parameters are extracted by fitting to on-wafer measured S-parameters. Good agreement is obtained between measured and simulated S-parameters based on the equivalent circuit model.

► First S-parameter measurements of LaAlO3/SrTiO3 field effect transistors.
► Small signal model is in good agreement with measurements.
► Gigahertz frequency response is indicated with scaling of gate length.