An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect

A 2-D analytical thermal model for the I–V characteristics of AlGaN/GaN is presented. The effect of self-heating is studied by investigating the temperature effects on various parameters: the 2DEG sheet carrier density, the Fermi level, the electron mobility, the saturation velocity and the critical field. After incorporating self-heating effect in calculations of current–voltage characteristics, our results agreed well with published experimental data.