Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

The breakdown voltage statistics of Al2O3/HfO2 nanolaminate multilayer dielectrics fabricated by atomic layer deposition (ALD) are modeled within the percolation theory. Moreover, the nanolaminate breakdown properties are predicted from the breakdown statistics of the separate materials, thus providing a reliable breakdown design framework for nanolaminates. Comparison with experimental data suggests that the electric field in each of the dielectric layers, rather than the total gate voltage, is the variable that controls the breakdown statistics.

► Percolation model applied to the breakdown statistics of Al2O3/HfO2 nanolaminates.
► Nanolaminate breakdown distribution is predicted from those of separate materials.
► Design of the breakdown properties is made possible by dielectric nanolaminates.
► Experiments suggest that the variable controlling breakdown is electric field.