Two-dimensional carrier mapping at the nanometer-scale on 32 nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

This work presents the properties and applications of high vacuum scanning spreading resistance microscopy (HV-SSRM) for two-dimensional carrier profiling. Characteristics of this concept in terms of spatial resolution and dopant gradient resolution as well as in terms of concentration sensitivity and quantification procedures are briefly presented. Insight in process optimization and junction engineering is demonstrated by linking the carrier profiles extracted from HV-SSRM technique with electrical device characteristics for a laser-only annealed p-MOSFET lot targeting the 32 nm node.

► High vacuum scanning spreading resistance microscopy technique is introduced.
► Resolution and sensitivity performances of the technique are presented.
► A laser-only annealed p-MOSFET lot targeting the 32 nm node is analyzed.
► Carrier profiles extracted are compared with electrical device characteristics.
► Process optimization is demonstrated.