کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748792 894789 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical properties studies in InGaN/GaN multiple-quantum well
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Optical properties studies in InGaN/GaN multiple-quantum well
چکیده انگلیسی

A comparative study on temperature-dependent photoluminescence (PL) of InGaN/GaN multiple-quantum-well (MQW) violet-blue light-emitting diodes (LEDs) is presented. For the violet-blue LEDs, the peak energy exhibits a well-established S-shaped temperature behavior. The redshift at low temperatures is explained by carrier relaxation into lower energy states, which leads to dominant radiative recombination occurring mostly at localized states. The temperature-dependent PL was attributed to the localization effects in the MQW region of the samples. Up to three phonon replicas were also observed in the side-band of the quantum well luminescence with an energy separation similar to the GaN longitudinal-optical (LO)-phonon energy (∼91 meV). The properties of LO-phonon satellites were investigated as a function of the indium fraction and the well-width in a active layer at low temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 3, March 2009, Pages 336–340
نویسندگان
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