High-density NiSi nanocrystals embedded in Al2O3/SiO2 double-barrier for robust retention of nonvolatile memory

NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si2H6 as Si precursor and Ni as catalyst. A metal–oxide–semiconductor memory device with NiSi nanocrystal–Al2O3/SiO2 double-barrier structure was fabricated. Large memory window and excellent retention at both room temperature and high temperature of 85 °C were demonstrated.

► NiSi nanocrystals of high density and good uniformity were synthesized.
► MOS memory with band-engineered NC-double-barrier structure as floating gate was fabricated.
► Excellent retention at both room temperature and 85 °C were demonstrated.