کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749095 894807 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Calculation of cosmic ray limited maximum DC blocking voltages of high voltage silicon PIN diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Calculation of cosmic ray limited maximum DC blocking voltages of high voltage silicon PIN diodes
چکیده انگلیسی

A power law approach as used by Fulop for the treatment of impact ionization and breakdown in abrupt silicon P–N junctions [Fulop W. Calculation of avalanche breakdown voltages of silicon P–N junctions. Solid-State Electron. 1967;10:39–43] is developed in this paper to provide simple-to-use equations for the quantitative evaluation of cosmic ray related phenomena in high voltage power devices. Being empirical in nature, such approaches have no physical background and only serve the purpose of generating a simple and compact mathematical framework. The resulting compact model allows for a quick and straightforward computation of DC blocking voltages as a function of FIT rate, n-base doping and temperature. The determination of model parameters is based on the theory and data given in [Zeller HR. Cosmic ray induced failures in high power semiconductor devices. Solid-State Electron. 1995;38(12):2041–6]. With the new approach, calculating first-hand maximum DC blocking voltages for high voltage power semiconductor devices becomes as effortless as the calculation of the breakdown voltage.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 7, July 2008, Pages 1052–1057
نویسندگان
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