کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749282 | 894817 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1âx DHBTs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The static gain characteristics of N-p-N InP/GaAsxSb1âx/InP double heterojunction bipolar transistors (DHBTs) were studied as a function of the base arsenic (As) mole fraction x. Compared to the devices with a lattice-matched base (x = 0.51), a current gain improvement largely arising from a base current reduction is observed in DHBTs with higher As base mole fractions (and consequently a reduced type-II conduction band discontinuity ÎEC at the emitter-base heterojunction). Both the surface periphery and the intrinsic recombination currents decrease markedly as the base arsenic concentration increases. The present work therefore unambiguously demonstrates that the emitter type-II conduction band discontinuity between the InP emitter and the GaAsxSb1âx base enhances the undesirable emitter size effects (ESEs) and increases intrinsic recombination currents directly under the emitter contact.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 8, August 2008, Pages 1202-1206
Journal: Solid-State Electronics - Volume 52, Issue 8, August 2008, Pages 1202-1206
نویسندگان
Y.P. Zeng, O. Ostinelli, H.G. Liu, C.R. Bolognesi,