کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749378 | 894824 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reconfigurable threshold logic gates with nanoscale DG-MOSFETs
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reconfigurable threshold logic gates with nanoscale DG-MOSFETs Reconfigurable threshold logic gates with nanoscale DG-MOSFETs](/preview/png/749378.png)
چکیده انگلیسی
The benefits in using double-gate (DG) MOSFETs as components of threshold logic gates (TLG) have been analyzed for the first time. A novel, variable-weight DG-TLG has also been proposed, which can greatly widen the range of reconfigurable functions accessible to users. Both fixed and variable-weight DG-TLG circuits operate correctly at a low supply voltage of 1.0Â V, and outperform the conventional CMOS equivalents in terms of the most important metrics such as power, speed and area. It is found that variable-weight DG-TLG circuits with analog weight and threshold control have attractive features such as expanded TLG functionality, reduced transistor count, low programming voltages and power-scaling capability, particularly for circuits with four or fewer inputs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 10, October 2007, Pages 1301-1307
Journal: Solid-State Electronics - Volume 51, Issue 10, October 2007, Pages 1301-1307
نویسندگان
Savas Kaya, Hesham F.A. Hamed, Darwin T. Ting, Gregory Creech,