کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749390 894824 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High aspect ratio cylindrical nanopores in silicon-on-insulator substrates
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
High aspect ratio cylindrical nanopores in silicon-on-insulator substrates
چکیده انگلیسی

Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 10, October 2007, Pages 1391–1397
نویسندگان
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