کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749423 | 894827 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have been successfully fabricated and investigated. Distinguished static and microwave-frequency characteristics of the E-mode and D-mode pHEMTs at high ambient temperatures and the temperature-dependent performances of the monolithic DCFL gate integration have been comprehensively studied. Experimentally, the studied device demonstrates superiorly stable thermal threshold coefficient (âVth/âT) of 1 (â1.27) mV/mm-K for the D-mode (E-mode) device. The noise margins of the DCFL inverter, at VDD = 1 V, are superiorly maintained above 0.1 V as the ambient temperature increases up to 400 K. The present devices are promisingly suitable for the low-power-dissipation, high-temperature digital circuit or the mixed-mode circuit applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 6, June 2007, Pages 882-887
Journal: Solid-State Electronics - Volume 51, Issue 6, June 2007, Pages 882-887
نویسندگان
Jun-Chin Huang, Wei-Chou Hsu, Ching-Sung Lee, Dong-Hai Huang, Ming-Feng Huang,