کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749651 | 894837 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modelling of strained-Si/SiGe NMOS transistors including DC self-heating
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, a new model of surface-channel strained-Si/SiGe NMOSFETs is derived based on the extension of non-quasi-static (NQS) circuit model developed previously for bulk-Si devices. Basic equations of the NQS MOS model have been modified to account for new physical parameters of strained-Si and relaxed-SiGe layers. In addition, the device steady-state self-heating is efficiently included without employing the thermal-flow analog auxiliary sub-circuits. From the comparisons of modelling results with numerical simulations and measurements, it is shown that a modified NQS MOS including steady-state self-heating can accurately predict the DC characteristics of strained-Si/SiGe NMOSFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 3, March 2006, Pages 496–499
Journal: Solid-State Electronics - Volume 50, Issue 3, March 2006, Pages 496–499
نویسندگان
Nebojsa D. Jankovic, Tatjana V. Pesic, Anthony O’Neill,