کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749665 | 894840 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Based on the fully two-dimensional (2D) Poisson’s solution in both silicon film and insulator layer, a compact and analytical threshold voltage model, which accounts for the fringing field effect of the short channel symmetrical double-gate (SDG) MOSFETs, has been developed. Exploiting the new model, a concerned analysis combining FIBL-enhanced short-channel effects and high-k gate dielectrics assess their overall impact on SDG MOSFET’s scaling. It is found that for the same equivalent oxide thickness, the gate insulator with high-k dielectric constant which keeps a great characteristic length allows less design space than SiO2 to sustain the same FIBL induced threshold voltage degradation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 3, March 2007, Pages 387–393
Journal: Solid-State Electronics - Volume 51, Issue 3, March 2007, Pages 387–393
نویسندگان
T.K. Chiang, M.L. Chen,