کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749711 894845 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law
چکیده انگلیسی

For many years, HBTs have been vertically and laterally scaled down to improve high-frequency performance. For the very small devices of recent process, some parameters cannot be scaled down properly and an alternative scaling-law is required. In this paper, we describe the optimization issues for high-speed InP/InGaAs SHBTs and offer a design guideline to accommodate the scaling limit. From a 0.25 μm SHBT designed by the scaling law, the maximum extrapolated fmax of about 687 GHz with fT of 215 GHz can be achieved. We also investigate the effect of key geometrical parameters such as emitter geometry and base/collector layer thicknesses on the device RF performance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 5, May 2006, Pages 733–740
نویسندگان
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