CONTUNT: Thin SOI control tunneling transistor

A tunneling transistor (CONTUNT) compatible with ultra-thin SOI technology is presented. The gate controls the long depletion region of the drain p-n+ junction when the longitudinal component of the electric field becomes large enough to enable interband tunneling. The drain tunnel current strongly depends on the gate voltage. Our analytical model shows that the transistor transconductance and frequency of operation can reach about 1 (A/V)/mm and 1 THz, respectively.