کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749797 | 894850 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work studies the constant current stressing effects on the ultrathin (1.7-3Â nm) oxides prepared by thermal oxidation of silicon in nitric oxide (N2O). A simple process evaluation formula for extracting the stress-induced flatband shift is developed and validated with capacitance-voltage measurements. We find that the flatband degradation does not follow the power law, rather an exponential law with a quasi-saturation region is observed as a result of the slow trap generation rate or the generation of positive charge during the constant current stressing. The sources of trap generation are attributed to the Si-Si bonds, Pb centers, and nitride-related defects due to the over-constrained silicon atoms in the Si3N4 clusters at the interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 170-176
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 170-176
نویسندگان
H. Wong, C.K. Wong, Y. Fu, J.J. Liou,