کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749816 | 894850 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb](/preview/png/749816.png)
چکیده انگلیسی
In this paper, high-k LaAlO3 is proposed as tunnel dielectric for p-channel flash memory device application. The program/erase (P/E) injection current characteristic of p-channel flash memory cells with LaAlO3 tunnel dielectric is investigated compared to the cells with SiO2 tunnel dielectric by two-dimensional (2-D) device simulation, which shows that the bit line bias can be lowered from −5 V to −3 V during both P/E operations of flash memory cells with LaAlO3 tunnel dielectric, meanwhile retains the fast P/E speed and high injection efficiency. Our work also shows that drain disturb, one of the main issues for p-channel flash memory, is alleviated dramatically due to the lower P/E voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 276–281
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 276–281
نویسندگان
Yimao Cai, Ru Huang, Xiaonan Shan, Falong Zhou, Yan Li, Yangyuan Wang,