کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749816 894850 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb
چکیده انگلیسی

In this paper, high-k LaAlO3 is proposed as tunnel dielectric for p-channel flash memory device application. The program/erase (P/E) injection current characteristic of p-channel flash memory cells with LaAlO3 tunnel dielectric is investigated compared to the cells with SiO2 tunnel dielectric by two-dimensional (2-D) device simulation, which shows that the bit line bias can be lowered from −5 V to −3 V during both P/E operations of flash memory cells with LaAlO3 tunnel dielectric, meanwhile retains the fast P/E speed and high injection efficiency. Our work also shows that drain disturb, one of the main issues for p-channel flash memory, is alleviated dramatically due to the lower P/E voltage.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 2, February 2006, Pages 276–281
نویسندگان
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