کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
752592 895445 2016 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays
چکیده انگلیسی


• We compare different pulse-based forming techniques on 4 kbits RRAM arrays.
• We performed post-forming modeling during Reset operation.
• An Incremental Form and Verify technique (IFV) shown the best results.
• This technique narrows the read current distribution, reducing the switching voltage.
• This allows reducing cell-to-cell variability, switching time and energy.

The forming process, which corresponds to the activation of the switching filament in Resistive Random Access Memory (RRAM) arrays, has a strong impact on the cells’ performances. In this paper we characterize and compare different pulse forming techniques in terms of forming time, yield and cell-to-cell variability on 4 kbits RRAM arrays. Moreover, post-forming modeling during Reset operation of correctly working and over formed cells has been performed. An incremental form and verify technique, based on a sequence of trapezoidal waveforms with increasing voltages followed by a verify operation that terminates when the expected switching behavior has been achieved, showed the best results. This procedure narrows the post-forming current distribution whereas reducing the Reset switching voltage and the operative current. These advantages materialize in a better control of the cell-to-cell variability and in an overall time and energy saving at the system level.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 115, Part A, January 2016, Pages 17–25
نویسندگان
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