کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
752638 1462223 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis
ترجمه فارسی عنوان
تاثیر ضخامت لایه فعال در ترانزیستورهای نازک بر پایه اکسید روی با استفاده از اپی لایت اسپری اولتراسونیک
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی


• Application of ZnO films by ultrasonic spray pyrolysis at 200 °C in TFTs is demonstrated.
• Thicker active layer results in better output characteristics (Ids vs. Vds).
• Thinner active layer results in better transfer characteristics such as on/off-current ratio.

In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200 °C. The ZnO films obtained at 200 °C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 109, July 2015, Pages 33–36
نویسندگان
, , , , , , , , ,