Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites

• Two terminal CdSe and Ag doped CdSe polymer nanocomposite memory devices are fabricated.
• I–V and C–V measurements are performed on the prepared devices.
• The devices show I–V and C–V hysteresis loops in the both positive and negative applied voltages.
• Memory performance of the devices is found to increase with both Ag doping and PVA layer addition.

Resistive memory devices based on nanocomposites have attracted great potential for future applications in electronic and optoelectronic devices. The successful synthesis of aqueous CdSe nanoparticles has been provided with UV–Vis and Photoluminescence spectroscopy. The two terminal planar devices of CdSe nanocomposite have been fabricated. The effect of Ag doping and additional dielectric buffer layers on the memory devices have been studied by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The devices show hysteresis loops in both positive and negative bias directions. The memory window has been found to be increased with both Ag doping and PVA layer addition. The charge carrier transport mechanism in the memory devices has been studied by fitting the I–V characteristics with the theoretical model, Space charge conduction model (SCLC). C–V hysteresis loop in both positive and negative bias directions indicate that both the electrons and holes are responsible for memory mechanism of the devices. The switching mechanism of the memory devices has been explained by charge trapping/detrapping model. The retention characteristics show good stability and reliability of the devices.