Explicit model for the gate tunneling current in double-gate MOSFETs

In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal–oxide–semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrödinger–Poisson (SP) equations has been performed to demonstrate the accuracy of the model.

► We present an explicit compact quantum model for the gate tunneling current in (DG-MOSFET).
► An explicit expression is proposed and useful for the gate leakage in the context of electrical circuit simulators.
► This model was checked via comparison with self-consistent SP simulations.