کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753086 895492 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mobility analysis of surface roughness scattering in FinFET devices
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Mobility analysis of surface roughness scattering in FinFET devices
چکیده انگلیسی

This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.


► Mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices.
► The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions.
► The contribution of the surface roughness scattering was analysed and that on sidewalls was about three times stronger than on top surface for n-channel FinFETs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 62, Issue 1, August 2011, Pages 195–201
نویسندگان
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